Normal state electronic properties of LaO1-xFxBiS2 superconductors

摘要

A good description of the electronic structure of BiS2-based superconductors is essential to understand their phase diagram, normal state and superconducting properties. To describe the first reports of normal state electronic structure features from angle resolved photoemission spectroscopy (ARPES) in LaO1-xFxBiS2, we used a minimal microscopic model to study their low energy properties. It includes the two effective tight-binding bands proposed by Usui et al., Phys. Rev. B, 86, 2012, 220501(R), and we added moderate intra- A nd inter-orbital electron correlations related to Bi-(pY, pX) and S-(pY, pX) orbitals. We calculated the electron Green's functions using their equations of motion, which we decoupled in second-order of perturbations on the correlations. We determined the normal state spectral density function and total density of states for LaO1-xFxBiS2, focusing on the description of the k-dependence, effect of doping, and the prediction of the temperature dependence of spectral properties. Including moderate electron correlations, improves the description of the few experimental ARPES and soft X-ray photoemission data available for LaO1-xFxBiS2. Our analytical approximation enabled us to calculate the spectral density around the conduction band minimum at k→0=(0.45π,0.45π), and to predict the temperature dependence of the spectral properties at different BZ points, which might be verified by temperature-dependent ARPES.